کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685190 | 1010548 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SIMS study of effect of Cr adhesion layer on the thermal stability of silver selenide thin films on Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Effect of heat treatment on silver selenide films grown from diffusion-reaction of Ag and Se films on Cr-buffered Si substrates was investigated up to 400 °C. X-ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) were used to characterize the films. XRD patterns of the films showed stress assisted change in preferential orientation of the films upon annealing: the films annealed at 200 °C exhibited a strong orientation along (2 0 0) plane, which changed to (0 1 3) after annealing at 300 and 400 °C. Dynamic SIMS measurements showed that Cr is confined to the interface and that there is no diffusion of Cr into silver selenide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1480-1485
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1480-1485
نویسندگان
Bhaskar Chandra Mohanty, A.K. Tyagi, A.K. Balamurugan, Shikha Varma, S. Kasiviswanathan,