کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685365 | 1010556 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized β-FeSi2 precipitates embedded in the active region
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
A metal-oxide-silicon (MOS) tunneling light-emitting diode is fabricated with ion-beam-synthesized β-FeSi2 precipitates embedded in the active region. Fe ions were implanted into pâ-100 silicon substrate at cryogenic temperature (â¼â120 °C), followed by rapid thermal oxidation (RTO). Under constant voltage biased in accumulation and at temperatures down to 80 K, electroluminescence (EL) with wavelength peaking at â¼1.5 μm is observed at a current density of about 2.0 A/cm2. Light output increases linearly with current density. Temperature dependence of the EL shows that the luminescence is due to interband recombination in the crystalline precipitates. The strain in these isolated precipitates may contribute to the luminescence properties of β-FeSi2 in silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 7, 15 April 2009, Pages 1081-1084
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 7, 15 April 2009, Pages 1081-1084
نویسندگان
C.M. Sun, H.K. Tsang, S.P. Wong, W.Y. Cheung, N. Ke, M.A. Lourenço, K.P. Homewood,