کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1685522 | 1010565 | 2011 | 5 صفحه PDF | دانلود رایگان |
The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 1012 to 2 × 1016 cm−2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain εm as a function of the Be fluence was obtained and analyzed. The curve of εm vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 21, 1 November 2011, Pages 2527–2531