Lattice expansion and evolution of damage buildup in Be-implanted InAs

The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 1012 to 2 × 1016 cm−2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain εm as a function of the Be fluence was obtained and analyzed. The curve of εm vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.