Keywords: هندوانه آرسنید; Ag; silver; Ag2S; silver Sulfide; AIST; Japanese National Institute of Advanced Industrial Science and Technology; AM; air mass; a-Si; amorphous silicon; Au; gold; AZO; Al-doped ZnO; Bi2S3; bismuth(III) sulfide; CB; conduction band; CBD; chemical bath dep
مقالات ISI هندوانه آرسنید (ترجمه نشده)
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Keywords: هندوانه آرسنید; Indiun tin oxide; Gallium Arsenide; Schottky barrier; Indium Arsenide; Quantum dots; Solar cells
High-energy terahertz surface optical rectification
Keywords: هندوانه آرسنید; THz; Terahertz; OR; Optical Rectification; InAs; Indium Arsenide; InSb; Indium Antimonide; OPTP; Optical Pump Terahertz Probe; OPRE; Optical Pump Rectification Emission; SP; Screening Pump; TP; Terahertz Pump; Terahertz dynamics; Quasi-2D nonlinear optics
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C
Keywords: هندوانه آرسنید; Thermophotovoltaics; Indium arsenide; Waste heat recovery; Quantum efficiency;
Bonding of cysteamine on InAs surfaces
Keywords: هندوانه آرسنید; Cysteamine; Indium arsenide; Semiconductor; Passivation;
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
Keywords: هندوانه آرسنید; Molecular beam epitaxy; III-V semiconductors; Indium arsenide; Terahertz;
Defect annihilation-mediated enhanced activation energy of GaAs0.979N0.021-capped InAs/GaAs quantum dots by Hâ ion implantation
Keywords: هندوانه آرسنید; Indium arsenide; Quantum dots; Gallium arsenide nitride; Capping layer; Activation energy; Hydrogen ion implantation; Photoluminescence; Peak emission;
Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions
Keywords: هندوانه آرسنید; Indium arsenide; Surface; Oxidation; Etching; Rate limiting step;
Preparing and characterization of indium arsenide (InAs) thin films by chemical spray pyrolysis (CSP) technique
Keywords: هندوانه آرسنید; Indium arsenide; Chemical spray pyrolysis; Thin films
Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface
Keywords: هندوانه آرسنید; Indium arsenide; Bismuth; Chemical reactivity; Circular pattern morphology; PEEM; ARPES;
Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells
Keywords: هندوانه آرسنید; Indium arsenide; Quantum dots; Quantum wells; Strain reducing layer; Photoluminescence; Time-resolved spectroscopy; Temperature dependence
Molecular dynamics simulations for thermal transport behavior of InAs nanotubes: A role of symmetry
Keywords: هندوانه آرسنید; Thermoelectrics; Indium arsenide; Nanowire; Nanotube; Molecular dynamics; Thermal conductivity;
Structure of ordered oxide on InAs(100) surface
Keywords: هندوانه آرسنید; Ab initio calculations; Indium arsenide; Oxide; Surface reconstruction;
Cation-anion mixed-dimer structure of Al-induced (2Â ÃÂ 4) reconstruction on InAs(001)
Keywords: هندوانه آرسنید; Reflection high-energy electron diffraction (RHEED); Reflectance difference spectroscopy; Scanning tunneling microscopy; Indium arsenide; Surface structure;
Lattice expansion and evolution of damage buildup in Be-implanted InAs
Keywords: هندوانه آرسنید; III–V Semiconductors; Ion-implantation; HRXRD; Microstructure; Indium arsenide
Correlated development of a (2Â ÃÂ 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface
Keywords: هندوانه آرسنید; Adatoms; Indium arsenide; Bismuth; Photoemission; 2 DEG;
Energetics of the growth mode transition in InAs/GaAs(0 0 1) small quantum dot formation: A first-principles study
Keywords: هندوانه آرسنید; Density-functional calculations; Gallium arsenide; Indium arsenide; Growth mode transition; Surface thermodynamics;
Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method
Keywords: هندوانه آرسنید; Self-assembled quantum dot; Molecular beam epitaxy; Indium arsenide; Photoluminescence; Single photon emitters
Self-assembled monolayers of octadecanoic acid on indium arsenide
Keywords: هندوانه آرسنید; Indium arsenide; Carboxylic acid; Self-assembly; X-ray photoelectron spectroscopy; Oxidation; Thermal desorption;
Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
Keywords: هندوانه آرسنید; Strain-induced quantum dots & pits; III-V semiconductors; Indium arsenide; Antimony; Phosphorus; Liquid phase epitaxy; Growth; Self-assembly; Density functional calculations; Scanning electron microscopy;
Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4Â ÃÂ 2)/c(8Â ÃÂ 2)
Keywords: هندوانه آرسنید; Scanning tunneling microscopy; Indium arsenide; Semiconducting surfaces; Surface chemical reaction; Atomic layer deposition; Oxidants;
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots
Keywords: هندوانه آرسنید; Doping effects; Electrical measurements; Gallium arsenide; Indium arsenide; Quantum structures; Schottky barrier;
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
Keywords: هندوانه آرسنید; Indium arsenide; Transmission electron microscopy; Electrical measurements; Molecular beam epitaxy; Quantum dots;
Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
Keywords: هندوانه آرسنید; Quantum dots; Metal-organic vapor phase epitaxy; Indium arsenide; Gallium arsenide; Photoluminescence; Atomic force microscopy
Passivation of GaSb and InAs by pH-activated thioacetamide
Keywords: هندوانه آرسنید; 81.05.Ea; 81.65.Rv; 81.65.Mq; 79.60.Dp; 82.80.Pv; X-ray photoelectron spectroscopy; Gallium antimonide; Indium arsenide; Thioacetamide; Passivation; Oxidation;
Oriented self-assembled monolayers of bifunctional molecules on InAs
Keywords: هندوانه آرسنید; X-ray photoelectron spectroscopy; Indium arsenide; Thiol; Self-assembled monolayers; Bifunctional; Oriented; Functionalization;
InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations
Keywords: هندوانه آرسنید; HDAAF; Quantum dot; Electron microscopy; Gallium arsenide; Indium arsenide; Semiconductor devices
Growth and electrical characterization of Zn-doped InAs and InAs1 â xSbx
Keywords: هندوانه آرسنید; Metal-organic vapor phase deposition; Indium arsenide; Indium arsenide antimonide; Doped III-V compounds; Zinc; Hall effect measurements;
Electronic structure of bismuth terminated InAs(1Â 0Â 0)
Keywords: هندوانه آرسنید; Adatoms; Indium arsenide; Bismuth; Photoemission; 2 DEG; Reconstruction;
Anomalous hybridization in the In-rich InAs(0Â 0Â 1) reconstruction
Keywords: هندوانه آرسنید; Density functional calculations; Scanning tunneling microscopy; Indium arsenide; Semiconducting surfaces; Surface relaxation and reconstruction;
Initial stages of the autocatalytic oxidation of the InAs(0Â 0Â 1)-(4Â ÃÂ 2)/c(8Â ÃÂ 2) surface by molecular oxygen
Keywords: هندوانه آرسنید; Density functional calculations; Monte Carlo simulations; Scanning tunneling microscopy; Chemisorption; Oxidation; Indium arsenide; Oxygen; Semi conducting surfaces;
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
Keywords: هندوانه آرسنید; Optical properties; Metalorganic vapor phase epitaxy; Indium arsenide; Gallium arsenide; Quantum dots
Large scale atomic ordering on uncovered GaAs(0Â 0Â 1) after InAs monolayer capping: Atomic structure of the (12Â ÃÂ 6) reconstruction
Keywords: هندوانه آرسنید; Molecular beam epitaxy; Scanning tunneling microscopy; Surface reconstruction; Surface structure; Gallium arsenide; Indium arsenide;
Anisotropic superexchange in one-dimensional Fe-chains on InAs(1 1 0)
Keywords: هندوانه آرسنید; Density functional calculations; Spin-dependent phenomena; Nanostructures; Metal-semiconductor magnetic heterostructures; Iron; Indium arsenide;
Pb induced charge accumulation on InAs(1Â 1Â 1)B
Keywords: هندوانه آرسنید; Photoelectron spectroscopy; Indium arsenide; Accumulation layer;
Boron and indium substitution in GaAs(0 0 1) surfaces: Density-functional supercell calculations of the surface stability
Keywords: هندوانه آرسنید; Chemisorption; Chemical vapor deposition; Growth; Density-functional calculations; Surface energy; Boron arsenide; Gallium arsenide; Indium arsenide;
Nanoscaled systems studied by Mössbauer spectroscopy: Fe/Tb multilayer contacts on InAs(001)
Keywords: هندوانه آرسنید; Perpendicular magnetic anisotropy; Spin structure; Tb/Fe multilayer; Mössbauer spectroscopy; CEMS; Magnetometry; Epitaxy; Indium arsenide; XRD; RHEED; Fe/InAs(001);
Monte Carlo simulations of δδ-doping placement in sub-100 nm implant free InGaAs MOSFETs
Keywords: هندوانه آرسنید; Monte Carlo models; Gallium arsenide; Indium arsenide; Heterostructures; Metal-oxide-semiconductor structures
Adsorption of Cs on InAs(1 1 1) surfaces
Keywords: هندوانه آرسنید; 79.60âi; 73.21âb; 68.43âh; Adatoms; Indium arsenide; Cs; Photoemission; 2DEG;
Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates
Keywords: هندوانه آرسنید; Quantum dot; Molecular beam epitaxy; Indium arsenide
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
Keywords: هندوانه آرسنید; Metal-oxide-semiconductor structures; Oxidation; Surface and interface states; Gallium arsenide; Indium arsenide
Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
Keywords: هندوانه آرسنید; Photoluminescence; Quantum dots; Indium arsenide;
Carrier emission from the electronic states of self-assembled indium arsenide quantum dots
Keywords: هندوانه آرسنید; Quantum dot; Indium arsenide; DLTS; Tunnelling; Trapping; Electron emission
In situ measurements of InAs and InP (0 0 1) surface stress changes induced by surface reconstruction transitions
Keywords: هندوانه آرسنید; Surface reconstructions; Indium arsenide; Indium phosphide; Surface stress; Molecular beam epitaxy;
Anisotropy of electron structure at InAs(1Â 1Â 1) surfaces by laser pump-and-probe photoemission spectroscopy
Keywords: هندوانه آرسنید; Laser methods; Angle resolved photoemission; Surface electronic phenomena (work function, surface potential, surface states, etc.); Indium arsenide;
Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)
Keywords: هندوانه آرسنید; 61.46.1w; 73.61.Ey; 81.15.Hi; 81.05.Cy; Molecular beam epitaxy; Indium arsenide; Quantum dots; Transmission electron microscopy;
The atomic structure of InAs quantum dots on GaAs(1Â 1Â 2)A
Keywords: هندوانه آرسنید; Molecular beam epitaxy; Scanning tunneling microscopy; Photoluminescence; Faceting; Gallium arsenide; Indium arsenide; High-index single crystal surfaces; Quantum dots;
Evolution of InAs quantum dot shape on GaAs(1¯1¯4¯)B
Keywords: هندوانه آرسنید; Scanning tunneling microscopy; Quantum dot; Growth; Gallium arsenide; Indium arsenide;
InAs wetting layer evolution on GaAs(0Â 0Â 1)
Keywords: هندوانه آرسنید; Molecular beam epitaxy; Scanning tunneling microscopy; Gallium arsenide; Indium arsenide; Quantum dot; Wetting layer; Heteroepitaxy;
Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias
Keywords: هندوانه آرسنید; Gallium arsenide; Indium arsenide; Metabolomics; Proteomics; Porphyrinuria; Proteinuria; Molecular biomarkers; Stress proteins;