کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423631 | 1507946 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Correlated development of a (2Â ÃÂ 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Correlated development of a (2Â ÃÂ 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface Correlated development of a (2Â ÃÂ 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface](/preview/png/5423631.png)
چکیده انگلیسی
We have studied the formation of a Bi-induced (2Â ÃÂ 2) reconstruction on the InAs(111)B surface. In connection to the development of the (2Â ÃÂ 2) reconstruction, a two dimensional charge accumulation layer located at the bottom of the InAs conduction band appears as seen through a photoemission structure at the Fermi level. Not well ordered Bi layers do not induce a charge accumulation. The Bi-induced reconstruction reduces the polarization of the pristine surface and changes the initial charge distribution. InAsBi alloying occurs below the surface where Bi acts as charge donor leading to the charge accumulation layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 605, Issues 1â2, January 2011, Pages 12-17
Journal: Surface Science - Volume 605, Issues 1â2, January 2011, Pages 12-17
نویسندگان
Karolina Szamota-Leandersson, Mats Leandersson, Mats Göthelid, Ulf O. Karlsson,