کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367027 1388360 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Passivation of GaSb and InAs by pH-activated thioacetamide
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Passivation of GaSb and InAs by pH-activated thioacetamide
چکیده انگلیسی
We describe the passivation by thioacetamide (TAM) of GaSb and InAs-two III-V semiconductor materials important for fabricating IR devices from Type-II superlattices (T2SLs). We use X-ray photoelectron spectroscopy (XPS) to characterize GaSb and InAs (001) surfaces treated by TAM under both acidic and basic conditions and to analyze the reoxidation of passivated surfaces over time. Both acid- and base-activated TAM treatments produce sulfide layers on GaSb and InAs. The layers produced by base-TAM appear to be of self-limited thickness <1 nm, whereas acid-TAM creates considerably thicker (1-2 nm) sulfide layers. Passivation by both acid- and base-activated TAM offers significant short-term (<1 day) protection against reoxidation, but does not prevent oxide formation after exposure to ambient air for 1-3 days. Based on this comparative study and previous literature reports, the chemical effects of TAM treatments on Ga, Sb, In, and As depend not only on the individual element and reaction conditions, but also on the compound. In other words, our results suggest that passivation chemistry for a common element in two different III-V materials should not, in general, be assumed to be the same.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 16, 30 May 2009, Pages 7121-7125
نویسندگان
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