کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425821 | 1395867 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Energetics of the growth mode transition in InAs/GaAs(0 0 1) small quantum dot formation: A first-principles study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Based on first-principles density-functional pseudopotential calculations, the growth of InAs on the GaAs(0 0 1) surface has been studied. By analyzing the free energies of the surfaces with different thicknesses of the InAs coverages, the critical thickness of the layer-by-layer (2D) to island (3D) growth mode transition is predicted to be around 1.5 ML. Comparing the total energy differences between layer-by-layer growth models and 3D island models, the mechanism of the 2D-3D growth mode transition near the critical thickness (θcrit) is studied which indicates that at the initial stage of InAs quantum dots formation, small 3D islands are formed randomly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 10, 15 May 2006, Pages 2007-2010
Journal: Surface Science - Volume 600, Issue 10, 15 May 2006, Pages 2007-2010
نویسندگان
En-Zuo Liu, Chong-Yu Wang,