کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1686022 1518757 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ion-induced tracks in amorphous Si3N4 films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ion-induced tracks in amorphous Si3N4 films
چکیده انگلیسی

Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD). The samples were irradiated in the electronic slowing-down regime, with either Pb ions of 110 MeV (Se = 19.3 keV nm−1) or Xe ions of 710 MeV (Se = 22.1 keV nm−1). Using infrared absorption spectroscopy, the radiation-induced disorder in Si3N4 was analysed as a function of the ion fluence (up to 4 × 1013 cm−2). Some targets irradiated at low fluences (∼109 cm−2) were etched at room temperature in aqueous HF solution (10 vol.%) for various durations. The processed surfaces were probed using atomic force microscopy (AFM) in order to evidence etched tracks and to measure their mean surface diameter. The non-simultaneous emergences of the nanopores at the Si3N4/Si interface and the limited etching efficiency allow to conclude that the tracks are probably discontinuous in the present irradiation conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2819–2823
نویسندگان
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