کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686022 | 1518757 | 2008 | 5 صفحه PDF | دانلود رایگان |

Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD). The samples were irradiated in the electronic slowing-down regime, with either Pb ions of 110 MeV (Se = 19.3 keV nm−1) or Xe ions of 710 MeV (Se = 22.1 keV nm−1). Using infrared absorption spectroscopy, the radiation-induced disorder in Si3N4 was analysed as a function of the ion fluence (up to 4 × 1013 cm−2). Some targets irradiated at low fluences (∼109 cm−2) were etched at room temperature in aqueous HF solution (10 vol.%) for various durations. The processed surfaces were probed using atomic force microscopy (AFM) in order to evidence etched tracks and to measure their mean surface diameter. The non-simultaneous emergences of the nanopores at the Si3N4/Si interface and the limited etching efficiency allow to conclude that the tracks are probably discontinuous in the present irradiation conditions.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2819–2823