Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 × 1015 ions/cm2 and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 × 1013 ions/cm2. The FTIR spectra showed a broaden absorption band between 460 and 630 cm−1, indicating that strong damaged region formed in Al2O3.