کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686292 | 1518762 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Vacancy defects induced in the track region of 132 MeV 12C irradiated SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Vacancy defects induced in the track region of 132 MeV 12C irradiated SiC Vacancy defects induced in the track region of 132 MeV 12C irradiated SiC](/preview/png/1686292.png)
چکیده انگلیسی
Positron annihilation lifetime spectroscopy (PALS) and electron paramagnetic resonance (EPR) have been used in this work to investigate vacancy defects induced in the track region of 132 MeV 12C irradiated silicon carbide. Irradiations have been performed at room temperature at a fluence of 2.5 × 1014 cm−2 in N-low doped 6H–SiC and 3C–SiC monocrystals. Silicon monovacancies have been detected in both polytypes using EPR. Their charge state and concentration have been determined in the track and cascade region of the C+ ions. PALS measurements performed as a function of temperature have shown the presence of VSi–C divacancies in the track region for both polytypes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 250, Issues 1–2, September 2006, Pages 259–262
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 250, Issues 1–2, September 2006, Pages 259–262
نویسندگان
X. Kerbiriou, M.F. Barthe, S. Esnouf, P. Desgardin, G. Blondiaux, E. Balanzat,