کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686461 | 1518763 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: GISAXS studies of structural modifications in ion-beam amorphized Ge GISAXS studies of structural modifications in ion-beam amorphized Ge](/preview/png/1686461.png)
Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3 × 1012 cm−2 to 3 × 1016 cm−2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 114–117