کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1686491 1518763 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Observation of the interfacial layer in HfO2(10 nm)/Si by high-resolution RBS in combination with grazing angle sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Observation of the interfacial layer in HfO2(10 nm)/Si by high-resolution RBS in combination with grazing angle sputtering
چکیده انگلیسی

A Si(0 0 1) wafer with a HfO2 layer of 10 nm thickness prepared by atomic layer CVD, is irradiated by 1 keV Xe+ ions at a grazing angle of 15°. The sample is measured in situ using high-resolution Rutherford backscattering spectroscopy. With removing a part of HfO2 layer by the grazing angle sputtering, the observed trailing edge of Hf signal becomes sharper, indicating an improvement of the depth resolution at the HfO2/Si interface. After removal of a part of the HfO2 layer (∼7 nm), the effective depth resolution becomes more than two times better than that before sputtering and the existence of the SiOx interface layer is clearly seen.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 238–241
نویسندگان
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