Keywords: Resistive switching; HfO2; PEEM; 00A79;
مقالات ISI (ترجمه نشده)
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Keywords: Hafnium; HfO2; Plasma electrolytic oxidation; Coatings; Optical emission spectroscopy;
Keywords: MoS2; Top-gated transistor; HfO2; Al2O3; High-k; Substrate;
Keywords: Pillar TEM specimen; X-ray absorption; EDS X-ray tomography; Transmission electron microscopy; SiGe; HfO2;
Keywords: Au-SiO2 core-shell NPs; HfO2; Nanocrystal memory; 3-Aminopropyltrimethoxysilane (APTMS);
Keywords: Ag@MSN; silver hybridized mesoporous silica nanoparticles; AFP; alpha-fetoprotein; APBA; 3-aminophenylboroic acid; APTES; 3-aminopropyltriethoxysilane; APTMS; aldehyde propyltrimethoxysilane; AuNPs@GMCs; graphitized mesoporous carbon-gold nanoparticles; B
Keywords: On-site radiation response; Real-time I-V/C-V test; High-κ dielectrics; Total-dose induced defects; HfO2;
Keywords: HfO2; Al2O3; MOS device; Ge MOS
Keywords: Quantum well intermixing; AlGaInP; Diode laser; HfO2
Keywords: High-k oxide; HfO2; Capacitance–voltage measurements; Conductance; SEM
Keywords: Metal/high-k stack; HfO2; Backside analysis; XPS; Auger depth profiling; ToF-SIMS;
Keywords: HfO2; thin films; dielectric; rare earths
Keywords: HfO2; ALD; Cu; Resistive memory; XPS depth profile; TEM
Keywords: Reflection electron energy loss spectroscopy; Ielectric function; HfO2;
Keywords: Resistive memory; Carbon; Graphene; HfO2; Switch; Interface
Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications
Keywords: Al2O3; HfO2; Combustion; Rietveld refinement; Band gap;
Photoluminescence properties of Eu3+ doped HfO2 coatings formed by plasma electrolytic oxidation of hafnium
Keywords: Photoluminescence; Plasma electrolytic oxidation; HfO2; Eu3+;
Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors
Keywords: High power impulse magnetron sputtering (HIPIMS); Ferroelectricity; HfO2;
Enhanced nucleation and growth of HfO2 thin films grown by atomic layer deposition on graphene
Keywords: High-k; HfO2; Nucleation; Atomic layer deposition; Graphene;
First principles study of structural, electronic, elastic and thermodynamic properties of cubic HfO2 under pressure
Keywords: HfO2; Structural; Electronic; Elastic; Thermodynamic; High pressures; High temperatures;
Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming
Keywords: RRAM devices; HfO2; Multilevel; Pulse programming;
Switching characteristics of microscale unipolar Pd/Hf/HfO2/Pd memristors
Keywords: HfO2; Unipolar; Size effect; Capping thickness; Switching mechanism; Temperature effect;
Reduction of defect states in atomic-layered HfO2 film on SiC substrate using post-nitridation annealing
Keywords: HfO2; Defect states; Atomic layer deposition; Post-nitridation annealing; SiC;
Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode
Keywords: HfO2; MOS; Schottky diode; GaN; Hydrogen sensing;
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics
Keywords: HfO2; Stacked dielectrics; Transfer characteristics; Threshold voltage shift; Negative and positive gate bias stress;
Metal-insulator-SiC Schottky structures using HfO2 and TiO2 dielectrics
Keywords: MIS structure; SiC; Schottky barrier height; HfO2; TiO2;
Investigation of cubic single crystal HfO2/Si interface under in-plane biaxial tensile strain
Keywords: Interface; HfO2; Biaxial strain; Oxygen defect;
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
Keywords: Thermal stability; Interfacial trap density (Dit); Molecular-beam-epitaxy (MBE); HfO2; GaAs; Metal-oxide-semiconductor capacitors (MOSCAPs);
Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices
Keywords: Al2O3; HfO2; Leakage; RRAM; Temperature;
Effective surface passivation of In0.53Ga0.47As(0Â 0Â 1) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Keywords: A3. Molecular-beam-epitaxy (MBE); Atomic-layer-deposition (ALD); B1. High-κ; HfO2; B2. InGaAs; B3. Metal oxide semiconductor capacitors (MOSCAPs); Interfacial trap density (Dit);
HfO2-based resistive switching memory with CNTs electrode for high density storage
Keywords: RRAM; HfO2; Carbon nanotube; High density storage;
Changes induced in the luminescent emission of Eu3+ by different crystal nature: An analysis by group theory
Keywords: Y2O3; HfO2; ZrO2; Eu3+; Luminescence; Group theory;
Modification of various properties of HfO2 thin films obtained by changing magnetron sputtering conditions
Keywords: HfO2; Thin films; Magnetron sputtering; Microstructure; Optical properties; Mechanical properties;
Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing
Keywords: Silicon carbide; MIS capacitors; HfO2; N2O plasma annealing; Electrical characteristics;
XANES, EXAFS and photoluminescence investigations on the amorphous Eu:HfO2
Keywords: XRD; XANES; EXAFS; HfO2; Photoluminescence;
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
Keywords: HfO2; Oxygen vacancy; ReRAM; Resistive switching; Low thermal budget;
Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system
Keywords: TiO2; HfO2; Mixed oxides coatings; Microstructure; Hardness; Scratch resistance; Optical and surface properties;
In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment
Keywords: HfO2; MoS2; Band alignment; Space-charge effect; 2D TMD material; In-situ growth and interface study; High-k dielectric;
Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements
Keywords: HfO2; IZO; HfO2/IZO heterostructure; Band alignment; X-ray photoelectron spectroscopy;
The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films
Keywords: HfO2; CoFeB/MgO; Magnetic anisotropy; Film defects; Oxygen migration;
Highly-impermeable Al2O3/HfO2 moisture barrier films grown by low-temperature plasma-enhanced atomic layer deposition
Keywords: Al2O3; HfO2; Mixed oxide film; Plasma-enhanced atomic layer deposition (PEALD); Thin-film encapsulation (TFE);
Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition
Keywords: HfO2; Hafnium silicide; Hafnium silicate; Diffusion depth; Tunnel contact;
A small shoulder of optical absorption in polycrystalline HfO2 by LDA+U approach
Keywords: HfO2; LDA+U approach; The optical properties; The shoulder-like structure; The shortest bond-length
Effect of annealing temperature on electrical and reliability characteristics of HfO2/porous low-k dielectric stacks
Keywords: Porous low-k dielectric; HfO2; Reliability; Breakdown; TDDB; Cu barrier
Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP
Keywords: HfO2; Al2O3; Composition engineering; InP; Atomic layer deposition
Annealing behavior of ferroelectric Si-doped HfO2 thin films
Keywords: HfO2; Ferroelectrics; RTA; Breakdown behavior
Multi-mode resistive switching behaviors induced by modifying Ti interlayer thickness and operation scheme
Keywords: Resistive switching; Complementary; Self-compliance; HfO2; Ti interlayer;
Improvement of performances HfO2-based RRAM from elementary cell to 16Â kb demonstrator by introduction of thin layer of Al2O3
Keywords: HfO2; Al2O3; RRAM; Demonstrator; HRS variability; Trap assisted tunneling;
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
Keywords: Clustering model; Conductive AFM; HfO2; Read disturb; Resistive switching; Sub-quantum conductance;
The low-lying singlet electronic excited states of HfO2: A symmetry adapted cluster-configuration interaction (SAC-CI) study
Keywords: HfO2; SAC-CI; Electronic excited states;