کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033190 | 1517967 | 2018 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reduction of defect states in atomic-layered HfO2 film on SiC substrate using post-nitridation annealing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The changes of the defect states below the conduction band in atomic-layered HfO2 film grown on SiC substrate were examined as a function of the post-nitridation annealing temperature in an NH3 ambient. As the post-nitridation annealing temperature increased up to 600 °C, the incorporated nitrogen into the HfO2/SiC interface was gradually increased. The band gap and valence band offset were mostly increased as a function of the post-nitridation annealing temperature and the band alignment of HfO2 films changed. O K-edge absorption features revealed two distinct band edge states below the conduction band edge in HfO2 films, and these defect states were dramatically reduced with increasing of the post-nitridation annealing temperature. The reduction of defect states in HfO2/SiC improved the electrical properties such as the leakage current density, breakdown voltage, and trap charge density in the HfO2 film and interface of HfO2/SiC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 645, 1 January 2018, Pages 102-107
Journal: Thin Solid Films - Volume 645, 1 January 2018, Pages 102-107
نویسندگان
Sera Kwon, Dae-Kyoung Kim, Mann-Ho Cho, Kwun-Bum Chung,