کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686493 | 1518763 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis Compositional analysis of HfxSiyO1−x−y thin films by medium energy ion scattering (MEIS) analysis](/preview/png/1686493.png)
چکیده انگلیسی
HfxSiyO1−x−y layers with thicknesses of 2 and 10 nm were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA), in which the yield of MEIS spectra was found to decrease with decreasing energy in contrast to conventional Rutherford backscattering spectrometry (RBS), due to the increase in neutralized particles.The HfxSiyO1−x−y spectra obtained by MEIS were corrected with a ratio of the simulated MEIS yield to measured yield for a virgin Si at each energy. The corrected HfxSiyO1−x−y spectra were analyzed and the compositions for 2 and 10 nm thick HfxSiyO1−x−y were obtained by MEIS. An interface layer was found to exist between the Si substrate and the HfxSiyO1−x−y layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 246–249
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 246–249
نویسندگان
H. Kitano, S. Abo, M. Mizutani, J. Tsuchimoto, T. Lohner, J. Gyulai, F. Wakaya, M. Takai,