کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686506 | 1518763 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stress and stress relief in dielectric thin films - the role of hydrogen
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Novel crack propagation modes are reported in amorphous silicon-rich oxide (SiOx) films deposited onto (1 0 0) silicon substrates and subjected to thermal annealing. These include the formation of straight cracks aligned with ã0 0 1ã directions in the underlying Si substrate as well as oscillating cracks aligned with ã0 1 1ã directions in the underlying Si substrate. The cracks are shown to form as the result of increasing tensile stress in the film caused by annealing, with the straight cracks forming at lower tensile stress levels than the oscillating cracks. The increase in tensile stress with increasing annealing temperature in the range 400-650 °C is shown to be correlated with the hydrogen content of the films, as measured by heavy-ion elastic recoil detection.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1â2, August 2006, Pages 310-313
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1â2, August 2006, Pages 310-313
نویسندگان
R.G. Elliman, T.D.M. Weijers-Dall, M.G. Spooner, Tae-Hyun Kim, A.R. Wilkinson,