کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686569 | 1010603 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of Al thin films charged with helium by DC magnetron sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Helium atoms, up to 6.9 at.%, were introduced into Al films by DC magnetron sputtering in a He/Ar mixed atmosphere and distributed evenly in it. The relation between the He/Ar flux ratio, bias voltage, substrate temperature and helium concentration is studied. The helium concentration can be easily controlled by change of the process parameters and it greatly affects the morphology of film. TEM analysis suggests that small helium bubbles with a diameter of 1 nm are formed in the grain.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 263, Issue 2, October 2007, Pages 446–450
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 263, Issue 2, October 2007, Pages 446–450
نویسندگان
Jian-ping Jia, Li-qun Shi, Xin-chun Lai, Qing-fu Wang,