Sheet resistance of GaAs conductive layers isolated by proton irradiation

A simple null charge model was employed to describe GaAs sheet resistance evolution as a function of proton implantation fluence using a previous knowledge of the irradiation created defect characteristics. In the specific case of GaAs irradiated with protons, three different irradiation related defect schemes were analyzed. Data obtained by both n-type and p-type majority carrier DLTS should be used together to give correct information about compensating deep centers. For a good estimation of isolation process by ion irradiation, not only the defects energy levels and introduction rates must be obtained, but also the corresponding charge transitions should be known.