کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686765 | 1010622 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Beam dispersion of ions penetrating through an amorphous compound binary layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Based on Monte Carlo simulations, we calculated the beam dispersion of ions penetrating through an amorphous binary compound layer with the atomic number of compositional elements ranging from ZÂ =Â 5 to ZÂ =Â 80. The scattering probabilities were compared with that obtained by approximating the compound layer as a monatomic target with mean atomic number and mean atomic mass. Very good agreement is observed between the two approaches for the compound substrate having close atomic numbers. An appreciable difference is observed for the substrate having considerably different atomic numbers. However, such differences disappear when the transition from single scattering (corresponding to an ultra thin layer) to multiple scattering (corresponding to a relatively thick layer) occurs. The study reveals the factor determining the validity and limits of the approximation method in studying scattering phenomena, with the motivation to provide a method to easily estimate the dechanneling of an ion beam passing through a crystalline compound target having a surface amorphous layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 9, 1 May 2010, Pages 1399-1403
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 9, 1 May 2010, Pages 1399-1403
نویسندگان
Lin Shao,