کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687200 | 1010648 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Energy related germination and survival rates of water-imbibed Arabidopsis seeds irradiated with protons
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Energy related germination and survival rates of water-imbibed Arabidopsis seeds irradiated with protons Energy related germination and survival rates of water-imbibed Arabidopsis seeds irradiated with protons](/preview/png/1687200.png)
چکیده انگلیسی
In order to investigate the influence of ion energy on the germination and survival rates, water-imbibed Arabidopsis seeds were irradiated with protons in atmosphere. The ion fluence used in this experiment was in the range of 4Â ÃÂ 109-1Â ÃÂ 1014Â ions/cm2. The ion energy is from 1.1Â MeV to 6.5Â MeV. According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5Â MeV can irradiate the shoot apical meristem directly whereas the ions with the energy of 1.1Â MeV cannot. The results showed that both the germination and survival rates decrease while increasing the ion fluence, and the fluence-respond curve for each energy has different character. Besides the shoot apical meristem (SAM), which is generally considered as the main radiobiological target, the existence of a secondary target around SAM is proposed in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 245, Issue 1, April 2006, Pages 314-317
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 245, Issue 1, April 2006, Pages 314-317
نویسندگان
H.L. Qin, J.M. Xue, J.N. Lai, J.Y. Wang, W.M. Zhang, Q. Miao, S. Yan, W.J. Zhao, F. He, H.Y. Gu, Y.G. Wang,