کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687203 | 1010648 | 2006 | 5 صفحه PDF | دانلود رایگان |
Silicon oxide films thermally grown on Si(1 0 0) wafers were irradiated with 200 MeV 197Au ions in the 109–1010 cm−2 fluence range. The targets were then etched at room temperature in aqueous HF solution (1 vol.%) for various durations. Atomic force microscopy (AFM) in the tapping mode was used to probe the processed surfaces. Conical holes with a low size dispersion were evidenced. Their surface diameter varies between 20 and 70 nm, depending on the etching time. Sol–gel dip coating technique, associated with a further annealing treatment performed at 500 °C for 15 min, was used to fill the nanopores created in SiO2 with a transparent conductive oxide (SnO2 doped with antimony). Transmission electron microscopy (TEM) performed on cross-sectional specimen showed that SnO2:Sb crystallites of ∼5 nm mean size are trapped in the holes without degrading their geometry.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 245, Issue 1, April 2006, Pages 327–331