Time Resolved Ion Beam Induced Current measurements on MOS capacitors using a cyclotron microbeam

As overlayers on electronic devices become progressively thicker, radiation effects microscopy using traditional microbeams (with ion energies up to a few tens of MeVs) is becoming less and less viable. To penetrate to the sensitive regions of these devices, much higher energies, several hundreds of MeVs are necessary. These high energies are available only from cyclotrons. A nuclear microprobe has been developed on the AVF cyclotron of the Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In this paper we will present the first results using 260 MeV Ne and 520 MeV Ar microbeams to perform Time Resolved Ion Beam Induced Current (TRIBIC) measurements on Metal-Oxide-Semiconductor (MOS) capacitors. The results will be compared to data taken with a traditional 15 MeV O microbeam.