Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, we have produced three-dimensional micro/nano-structures with high aspect ratio using cross linking process based on negative resist such as SU-8 by a technique of mask less ion beam lithography. By bombarding high energy heavy ions such as 450 MeV Xe23+ to SU-8, on the other hand, it appeared that a nanowire could be produced just with a single ion hitting. Then we tried to produce nanowires, of which both ends were fixed in the three-dimensional structure. This paper shows a preliminary experiment for this purpose using a combination of 15 MeV Ni4+ ion microbeam patterning and the 450 MeV 129Xe23+ hitting on SU-8.