High energy Sn ion implantation induced effects in InSb substrates

The effects of high energy 100 MeV Sn ion (Sn7+) implantation with fluences of 1 × 1011, 1 × 1012, 1 × 1013 and 1 × 1014 cm−2 in indium antimonide (InSb) substrates have been investigated. X-ray diffraction peak intensity of the implanted sample is decreased with respect to the fluences. This is attributed to the implantation induced lattice disordering of the sample. A decrease in the electron mobility and an increase in the carrier concentration of the implanted sample are observed by Hall effect measurements. It is due to the Sn ion implantation induced donor-like defects. Fourier transform infrared spectroscopy analysis indicates that a red shift of 12 meV is observed for the implanted sample with the fluence of 1 × 1014 cm−2 when compared to the unimplanted sample. Scanning electron microscopic images reveal columnar structures along the implanted region.