کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1687676 | 1010677 | 2007 | 5 صفحه PDF | دانلود رایگان |
A middle-frequency magnetron sputtering system was designed and constructed for GaN growth, in which a pair of back cooled pool-shaped twin magnetrons were used for Ga metal targets. GaN films were prepared using this system under various gas pressure (0.5–3.0 Pa) in a mixture of N2 and Ar with N2/Ar ratio of 6:1. X-ray diffraction showed that the GaN films had a strong (0 0 0 2) orientation, and the film deposited at 1.5 Pa had two more weak peaks attributed to (101¯2) and (101¯3). The full width at half maximum (FWHM) of the (0 0 0 2) peak for the GaN film deposited at 1.5 Pa and 0.5 Pa is ∼721 and ∼986 arcsec, respectively. The deposition rate was in the range of 43.5–87.8 nm/min and was mainly influenced by the deposition pressure. The films deposited at higher pressures are columnar in structure. A root-mean-square roughness of 4.4 nm was obtained from the atomic force microscopy (AFM) surface morphology of the film deposited at 0.5 Pa.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 262, Issue 2, September 2007, Pages 189–193