Comparative study of polyatomic secondary ion emission from silicon with Aum-, Sim- and Cm- projectiles

Comparative studies of the emission of the cluster Sin+ ions (n = 1-11) and polyatomic SinX+ ions (X is B, C, N) under bombardment of single crystalline silicon by the cluster Aum- (m = 1-9), Sim- (m = 1-6) and Cm- (m = 1-10) ions with energy E0 = 4-18 keV have been carried out. Significant non-additive enhancement of the yield of the Sin+ cluster ions and most polyatomic ones has been observed with an increase in the number of the atoms in the cluster projectiles. In spite of the fact that the yield of secondary cluster ions under Cm- and Sim- bombardment was less than that under Aum- bombardment, the relative enhancement of the yield with an increase in the number of atoms in the cluster projectiles was approximately the same for all types of projectiles with the same m. Strong increase in the yield of Si3B+, Si3C+, Si2N+ ions by 100-1000 times has been observed when both Sim- and Aum- projectiles with m = 5-9 instead of atomic ones were used.