CV characteristics of polycrystalline sige films with low GE concentration

The poly-SiGe samples presented Rs values one order of magnitude lower than poly-Si and CV analysis of nMOS capacitors showed very good characteristics. The 1% Ge in the alloy ensures a low thermal budget for the overall process. Although a relatively high annealing temperature (800 °C) must be used to reduce oxide charge and interface traps, the temperature is well below the necessary for poly-Si processing and can allow formation of the shallow junctions needed for next technological nodes.