کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1688014 | 1010709 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of attenuation coefficients, thicknesses and effective atomic numbers for CuInSe2 semiconductor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The X-rays attenuation coefficients for Cu, In and Se in elemental state and the semiconductor CuInSe2 were measured at 15 different energies from 11.9 to 37.3Â keV by using the secondary excitation method. Monochromatic photons were obtained using the following secondary targets: Br, Sr, Mo, Cd, Te and Ba. 59.5Â keV gamma rays emitted from an annular 241Am radioactive source were used to excite secondary target and X-rays emitted from secondary target were counted by a Si(Li) detector with a resolution of 0.16Â keV at 5.9Â keV. A method to determine the thickness of thin film with XRF is described. Additionally, the effect of absorption edges on effective atomic numbers and their variation with photon energy in composite semiconductor sample was discussed. Obtained values were compared with calculated values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 247, Issue 2, June 2006, Pages 173-179
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 247, Issue 2, June 2006, Pages 173-179
نویسندگان
UgËur Ãevik, Hasan BaltaÅ, Ahmet Ãelik, Emin Bacaksız,