Photoluminescence study of GaAs implanted with 100 MeV 28Si ions

Damage in n-GaAs implanted with 100 MeV 28Si ions has been investigated using low temperature (T ∼ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 1016 ions m−2, 1017 ions m−2 and 1018 ions m−2, respectively and annealed at various temperatures up to 1000 °C. A dominant annealing stage is seen at 650 °C where the PL begins to recover. PL spectra reveal several features which vary with annealing temperature, fluence and depth. Assignments of the defect structures responsible for the emission peaks are suggested.