کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1688066 | 1010715 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spectro-microscopy of Si doped GaN films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spectro-microscopy of Si doped GaN films Spectro-microscopy of Si doped GaN films](/preview/png/1688066.png)
چکیده انگلیسی
The surface segregation of Si used for doping of GaN films grown by metal-organic vapor phase epitaxy has been detected by spectro-microscopy. Facetted cracks with a threefold symmetry have been observed which extend over several micrometers. From local spectra, an enhanced Si segregation is deduced at the facets as compared to the flat surface. A scheme is presented which allows to extract quantitative information about the local surface concentrations for such facetted surface systems. Following to this scheme, Si coverages as high as approximately 4.5 × 1014 Si atoms/cm2 occur at the facets which clearly proves the segregation tendency of Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 246, Issue 1, May 2006, Pages 79–84
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 246, Issue 1, May 2006, Pages 79–84
نویسندگان
Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, J. Falta,