Effects of nitrogen gas ratio on magnetron sputtering deposited boron nitride films

Transformation from h-BN (boron nitride) to fullerene-like e-BN with increasing N2 ratios (fN2, 20-33%) has been found in a radio frequency magnetron sputtering deposition by using Fourier transform infrared spectroscopy (FTIR). X-ray photoelectron spectroscopy (XPS) examination suggests that the stoichiometric e-BN molecule contains equal numbers of sp3 and sp2 bonds at fN2=33%. The surface morphology and corresponding roughness of as-deposited BN films were evaluated by Atomic force microscopy (AFM).