کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1688632 1518973 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis and structure characterization of low dielectric constant MSQ films by using octamethyl cyclotetrasiloxane (D4) as a porosity promotion agent
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Synthesis and structure characterization of low dielectric constant MSQ films by using octamethyl cyclotetrasiloxane (D4) as a porosity promotion agent
چکیده انگلیسی


• The MSQ was prepared at room temperature. It is very good to commercialize.
• D4 liquid was network structure and was used as a porosity promotion agent.
• Anneal can change the dielectrics of thin films.

Low dielectric methylsilsesquioxane (MSQ) film can be synthesized by spin-coating on P–Si (100) wafer. Octamethyl cyclotetrasiloxane (D4) was used as a porosity promotion agent to MSQ film. Seven samples with different treatment were prepared. The dielectric constants of these MSQ films significantly lowered from 3.0 to 2.1. Fourier transform infrared spectroscopy was used to identify the Si–O–Si network structure, Si–O–Si cage structure and other bonds. The change of structure resulted in significant lowering of the dielectric constant (k). The capacitance–voltage (C–V) characteristic by HP4294A was used to determine the dielectric constant. Current–voltage (I–V) measurement by Keithley6517A was used to determine the breakdown electric field.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 96, October 2013, Pages 59–62
نویسندگان
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