Preparation of polycrystalline CdZnTe thick film Schottky diode for ultraviolet detectors

High resistivity (3 × 109 Ω cm) polycrystalline CdZnTe thick films with thickness of 25 μm–150 μm were grown on SnO2: F-coated glass substrates by close-spaced sublimation method. The properties of polycrystalline CdZnTe films were studied by XRD, SEM and EDS, respectively. A CdZnTe film Schottky diode detector was also fabricated and investigated using current–voltage and capacitance–voltage methods. The photo-current density of the device was about 1508.69 nA/mm2 under light illumination (λ = 260 nm), at an applied negative voltage of 15 V. The results showed that polycrystalline CdZnTe thick film was suitable for application in ultraviolet detectors.

► The preferred (111) oriented polycrystalline CdZnTe films were grown by CSS.
► CdZnTe films of thickness 25 μm–150 μm and high resistivity were obtained.
► Schottky diode was designed to investigate the electronic properties.
► I–V and C–V methods were carried out to evaluate the Schottky diode.
► A high photo-current density was obtained about 1580.69 nA/mm2.