Influence of deposition regime on physical properties of gallium doped zinc oxide films

► Non-standard sputtering geometry (oblique sputtering) of the Zno films was used. ► Gallium atoms were used as doping elements for ZnO conductivity improving. ► Conductivity of obliquely sputtered films increased about one order of magnitude. ► Applying 200°C substrate temperature the optical properties of the films improved.