Electrical properties of nickel electrodes for high-k MOS structures

► Work function of the Ni gate electrode on SiO2 and HfO2 dielectrics. ► Dielectric constants of HfO2 and Al2O3 thin layers. ► Thin SiO2 interfacial layer at HfO2/Si and Al2O3/Si interfaces. ► Ni as a promising gate electrode for high-k technology, particularly for HfO2 oxides.