Bias temperature instability in scaled CMOS technologies: A circuit perspective
Keywords: دروازه فلزی; High-k dielectrics; Metal gate; BTI; RTN; SRAM; Ring-oscillators; CMOS;
مقالات ISI دروازه فلزی (ترجمه نشده)
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Failure analysis on 14â¯nm FinFET devices with ESD CDM failure
Keywords: دروازه فلزی; Electrostatic Discharge (ESD); Failure analysis; 14â¯nm FinFET; Metal gate;
Assessment of sense measurement duration on BTI degradation in MG/HK CMOS technologies using a novel stacked transistor test structure
Keywords: دروازه فلزی; Bias Temperature Instability; Metal gate; High-k dielectrics; CMOS devices;
Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate
Keywords: دروازه فلزی; ALD; Metal gate; Work function; CMOS device
Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies
Keywords: دروازه فلزی; High-k dielectrics; Metal gate; BTI; TDDB; RTN; SRAM; Ring-oscillators; CMOS;
Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14Â nm NMOS devices
Keywords: دروازه فلزی; Metal gate; Effective work function; Dipole; Aluminum diffusion; CV measurements;
Structural and electrical properties of Nb/NbNx gates on HfO2 gate dielectrics
Keywords: دروازه فلزی; Metal gate; Effective work function; Niobium nitride; Bilayer structure; X-ray photoelectron spectroscopy;
Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
Keywords: دروازه فلزی; XPS; Metal gate; Tantalum; Interface; Hafnium; High-k dielectric;
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate
Keywords: دروازه فلزی; Neutral beam etching; Metal gate; Complementary metal–oxide–semiconductor field effect transistors (CMOSFETs)
La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
Keywords: دروازه فلزی; La2O3; High-k/InGaAs; Capacitor; Metal gate; Interface reaction; Interface state density
Investigating doping effects on high-κ metal gate stack for effective work function engineering
Keywords: دروازه فلزی; High-k; Metal gate; Work function; CV; Roll-off; Internal photon emission
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces
Keywords: دروازه فلزی; Ni work function; Metal gate; HfO2; Schottky barrier
Electrical properties of nickel electrodes for high-k MOS structures
Keywords: دروازه فلزی; High-κ oxides; Metal gate; CMOS technology; C-V measurement;
Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors
Keywords: دروازه فلزی; Al; Al2O3; metal gate; high-k dielectrics; NBTI
Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack
Keywords: دروازه فلزی; MOS; HfO2; Metal gate; Effective work function; EOT; Fermi level pinning
Parasitic bipolar impact in 32Â nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
Keywords: دروازه فلزی; FDSOI; Metal gate; Parasitic bipolar; UTBOX; Back bias;
Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs
Keywords: دروازه فلزی; Metal gate; High-k; Low-frequency noise; Positive bias temperature instability; Trap
Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET
Keywords: دروازه فلزی; Metal gate; Double gate MOSFET; Potential; Edge direct tunneling current
Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure
Keywords: دروازه فلزی; Effective work function (EWF); Flat band voltage (VFB); Metal gate; Aluminum (Al); Titanium nitride (TiN)
Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry
Keywords: دروازه فلزی; Internal photoemission; Spectroscopic ellipsometry; High-k dielectric; Metal gate; MOS; Band offsets; Band alignment; Interface;
A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility
Keywords: دروازه فلزی; Metal gate; Interface states; Charge pumping; Mobility;
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance
Keywords: دروازه فلزی; CMOS; MOSFET; Dual channel; Integration; Silicon-germanium; SOI; Strain; High-K; Metal gate; Mobility; Access resistance; Low-frequency noise;
Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-κ/metal gate stacks
Keywords: دروازه فلزی; Plasma etch; Strip; Wet clean; Metal gate; High-κ; Delay time; Lanthanum oxide; Residue
High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric
Keywords: دروازه فلزی; MoN; Metal gate; TiN; Thermal stability; Work function
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
Keywords: دروازه فلزی; SOI; Metal gate; Short channel effects; Fully-depleted; BOX; DIBL; Subthreshold slope
Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Keywords: دروازه فلزی; Ga2O3(Gd2O3); Al2O3; InGaAs; III–V; High-κ; Metal gate; UHV; ALD; Self-aligned; Inversion-channel; MOSFET
Evaluation of layered tunnel barrier charge trapping devices for embedded non-volatile memories
Keywords: دروازه فلزی; Charge-trapping memory device; Data retention; ONO; High-k; Metal gate; Band gap engineering; Non-volatile memory; Flash; EEPROM; Reliability
Interface roughness effect between gate oxide and metal gate on dielectric property
Keywords: دروازه فلزی; Interface roughness; Gate oxide; Metal gate; HfO2; Ru
First principles study of Nb–W bilayer metal gate electrode
Keywords: دروازه فلزی; Electronic structure; Metal gate; Work function; Interface; First-principles electron theory
Non-metallic effects in silicided gate MOSFETs
Keywords: دروازه فلزی; Metal gate; CMOS; Ultrathin gate oxide; Threshold voltage; Accumulation layer; EOT; Flatband voltage; Dark space; Quantum effects
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
Keywords: دروازه فلزی; SOI; Metal gate; Short-channel effects; Fully-depleted; BOX; DIBL; Subthreshold slope
The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)
Keywords: دروازه فلزی; High-k; Metal gate; Threshold voltage control; Capping layer; CMOS; EOT
Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)
Keywords: دروازه فلزی; High-K dielectrics; Metal gate; Mobility degradation; Negative Bias Temperature Instabilities NBTI; Nitrogen; Interface defects Nit; Hole traps; Remote coulomb scattering; Dipoles
Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate
Keywords: دروازه فلزی; Aluminum nitride; Atomic layer deposition; Gate dielectric; High κ; High permittivity; Molecular layer deposition; Molybdenum nitride; Metal gate; Capping layer; Effective work function
Silicide and germanide technology for contacts and gates in MOSFET applications
Keywords: دروازه فلزی; Silicon; MOSFET; Contact; Metal gate; Silicide; Germanide; Interface; Work function
Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique
Keywords: دروازه فلزی; Positive bias temperature stability; Pulse measurement; Detrapping; High-k dielectrics; Metal gate
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric
Keywords: دروازه فلزی; MOSFET; GaAs; InGaAs; High κ dielectric; Metal gate
A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes
Keywords: دروازه فلزی; Quantum mechanical; Electron mobility; Inversion; High-K; Metal gate
Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric
Keywords: دروازه فلزی; 73.30.+y; 73.40.Qv; 85.40.LsFully silicided (FUSI); Metal gate; Work function (WF); Flatband voltage (VFB); Interface trap
Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
Keywords: دروازه فلزی; Metal gate; High-k; Flat band voltage; HfO2; La2O3; Electronegativity
Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI
Keywords: دروازه فلزی; 3D MCFET; Metal gate; High-K; Mobility; Gate leakage; NBTI
Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks
Keywords: دروازه فلزی; MoN; Metal gate; TiN; Thermal stability; Work function
Dopant effects on the thermal stability of FUSI NiSi
Keywords: دروازه فلزی; FUSI; NiSi; Work function; CMOS; Metal gate; Thermal stability;
Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory
Keywords: دروازه فلزی; Flash memory; Floating gate; Interpoly dielectrics; High-k materials; Metal gate; Degas; Hafnium aluminate; HfAlOx
Electrical characteristics related to silicon film thickness in advanced FD SOI–MOSFETs
Keywords: دروازه فلزی; MOSFET; SOI; Ultra-thin silicon; HfO2; Metal gate
Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
Keywords: دروازه فلزی; High-k; Rare earth oxide; CMOS; Metal gate
Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications
Keywords: دروازه فلزی; MOS; HfxTayN; HfOxNy; Thermal stability; Metal gate; High-k
Advance in next Century nanoCMOSFET research
Keywords: دروازه فلزی; 73.40.Qv; 73.61.At; 73.61.Ng; 77.55.+f; Nano; MOSFET; High-k dielectric; Metal gate;
CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing
Keywords: دروازه فلزی; CMOS; Metal gate; Dual work function; Integration; Intermixing;
Physical insights on nanoscale multi-gate CMOS design
Keywords: دروازه فلزی; Double-gate MOSFETs; Pragmatic FinFETs; Undoped ultra-thin body; Metal gate; Gate-source/drain underlap