کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368337 | 1388390 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advance in next Century nanoCMOSFET research
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Advance in next Century nanoCMOSFET research Advance in next Century nanoCMOSFET research](/preview/png/5368337.png)
چکیده انگلیسی
It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65Â nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 1, 31 October 2007, Pages 236-241
Journal: Applied Surface Science - Volume 254, Issue 1, 31 October 2007, Pages 236-241
نویسندگان
Huey-Liang Hwang, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, Minghwei Hong, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Fu-Chien Chiu, Chun-Heng Chen, Joseph Ya-Min Lee, Albert Chin,