Parasitic bipolar impact in 32Â nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology

► Impact of UTBOX 10 nm w and w/o GP w and w/o Vb on the parasitic bipolar effect. ► Thick oxide, higher Vdd devices are more impacted by the parasitic bipolar effect. ► However breakdown voltage is still far higher than the Vdd of the technology. ► No real impact of GP on the breakdown voltage is seen. ► No real impact of Vb on breakdown voltage evolution (Take care of RBB case).