Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14 nm NMOS devices

Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14 nm NMOS devices

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 113-116

C. Suarez-Segovia, C. Leroux, P. Caubet, F. Domengie, G. Reimbold, G. Romano, O. Gourhant, V. Joseph, G. Ghibaudo,