کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541689 | 871484 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dopant effects on the thermal stability of FUSI NiSi
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The thermal stability of fully silicided (FUSI) NiSi with arsenic or boron doping on silicon on insulator (SOI) was investigated. After the stacks were subjected to a typical back-end of line (BEOL) thermal annealing in a N2 ambient, abnormal oxidation of As doped FUSI NiSi stacks is observed by X-ray photoelectron spectroscopy (XPS), and confirmed by high-resolution transmission electron microscopy (HRTEM). X-ray diffraction (XRD) results show Ni-rich phases like Ni3Si are formed due to abnormal oxidation of FUSI NiSi. In contrast to As doped stacks, no phase transformation nor abnormal oxidation are observed for B doped stacks under similar annealing. However, backside secondary ion mass spectrometry (SIMS) results indicate B penetration through a 3 nm SiON layer into the Si channel after N2 annealing for 4 h at 400 °C. There is no evidence for Ni diffusion into the Si channel for B doped stacks. However, Ni penetration into the Si channel is observed for As doped stacks due to the enhancement of abnormal oxidation of FUSI NiSi.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 1, January 2008, Pages 54-60
Journal: Microelectronic Engineering - Volume 85, Issue 1, January 2008, Pages 54-60
نویسندگان
P. Zhao, M.J. Kim, B.E. Gnade, R.M. Wallace,