کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749315 894820 2008 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical characteristics related to silicon film thickness in advanced FD SOI–MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Electrical characteristics related to silicon film thickness in advanced FD SOI–MOSFETs
چکیده انگلیسی

The impact of silicon-on-insulator (SOI) thinning on electrical characteristics is investigated for various SOI impurity concentrations, and for advanced structures with TiN gates and HfO2 gate dielectrics. It is experimentally and theoretically verified that the SOI film thickness that influences the quantum-confinement effect when the thickness decreases, clearly depends on the impurity concentration of SOI. However, once the quantum-confinement effect of the channel associated with SOI thinning occurs, the subband structure depends weakly on the SOI impurity concentration.Furthermore, the mobility in ultra-thin SOI–MOSFETs with HfO2 gate dielectrics and TiN gates is investigated. It is shown that the mobility of both the front and back channels is reduced, particularly, in the low electron density region. In addition, the mobility exhibits considerable variations in this region. These variations do not correspond to the variations in SOI thickness or gate-oxide thickness. The results suggest that they are due to the variations in the Coulomb scattering centers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 1, January 2008, Pages 126–133
نویسندگان
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