Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 303, 1 June 2014, Pages 388-392

Fabien Piallat, Virginie Beugin, Remy Gassilloud, Laurent Dussault, Bernard Pelissier, Charles Leroux, Pierre Caubet, Christophe Vallée,