Epitaxial growth and properties of cubic Zn0.7Mg0.3O films on TiN-buffered Si(100) substrates by in situ pulsed laser deposition

► Epitaxy cubic Zn0.7Mg0.3O film is achieved by pulsed-laser deposition. ► The substrate is Si(100), then TiN thin film is employed as a buffer layer. ► The cubic Zn0.7Mg0.3O film has good structural qualities and is transparent. ► The relative dielectric constant (ɛr) of cubic Zn0.7Mg0.3O capacitance is 8.1.