Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation

► Al-doped ZnO submicro sized rod arrays were produced by PLD. ► No catalyst was used. ► Rod structure can only be grown at relatively high oxygen pressures and high temperatures. ► Low resistivity and high carrier concentration can be obtained in these Al-doped ZnO rods. ► The strength of UV emission depends on the amount of Al doping.