Dry etching characteristics of HfAlO3 thin films in BCl3/Ar plasma using inductively coupled plasma system

► In this study, HfAlO3 thin films were etched in a BCl3/Ar plasma. ► The etching characteristics of the HfAlO3 thin films were investigated in various conditions. ► A maximum etch rate of 52.6 nm/min was achieved in the 30 % BCl3/(BCl3+Ar) plasma. ► The etched HfAlO3 thin films were investigated using X-ray photoelectron spectroscopy (XPS).