Thickness dependent properties of nickel oxide thin films deposited by dc reactive magnetron sputtering

Nickel oxide thin films of various thicknesses were grown on glass substrates by dc reactive magnetron sputtering technique in a pure oxygen atmosphere with sputtering power of 150 W and substrate temperature of 523 K. Crystalline properties of NiO films as a function of film thickness were investigated using X-ray diffraction. XRD analysis revealed that (200) is the preferred orientation and the orientation of the films changed from (200) to (220) at film thickness of 350 nm. The maximum optical transmittance of 60% and band gap of 3.82 eV was observed at the film thickness of 350 nm. The lowest electrical resistivity of 5.1 Ω cm was observed at a film thickness of 350 nm, thereafter resistivity increases with film thickness.

► NiO films were prepared as a function of film thickness by dc magnetron sputtering.
► Structural studies revealed that (200) was preferred orientation.
► The films prepared at 350 nm showed fine surface morphology.
► The highest optical transmittance of 60% was observed at 350 nm.
► The lowest electrical resistivity of 5.1 Ω cm was observed in the present study.