کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689255 | 1011223 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the deposition pressure on the preparation of μc-Si:H thin films in hot-wire-assisted MWECR-CVD system
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Considering the important influence of the deposition pressure on the growth of thin films, such as deposition rate, crystalline volume fraction and density, etc., and based on the analysis of the advantages and disadvantages on the mono-pressure method, we proposed a new method of high- and low-pressure combination to prepare hydrogenated microcrystalline silicon (μc-Si:H) films, i.e. at first we used high pressure to deposit film in 2 min in order to minish the thickness of incubation layer from the amorphous phase transition to crystalline phase, and then used low pressure to deposit film in 18 min to improve the density and decrease the oxidation of the film. The experimental results showed that using this new method the thin film with high crystalline volume fraction of 61% and low light-induced degradation ratio of 5.6% at 210 min was obtained, and meanwhile, it also possessed higher density and better photoelectronic properties than mono-pressure method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 83, Issue 2, 26 September 2008, Pages 386-390
Journal: Vacuum - Volume 83, Issue 2, 26 September 2008, Pages 386-390
نویسندگان
Xiu-Hong Zhu, Guang-Hua Chen, Mao-Sheng Zheng,