کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1689279 1011224 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model
چکیده انگلیسی

In this work, a gallium nitride (GaN) buffer layer was grown on a sapphire substrate (α-Al2O3) in a horizontal reactor by low pressure metal-organic chemical vapor deposition (LP-MOCVD). Trimethylgallium (TMGa) and ammonia (NH3) were precursors of gallium and nitrogen, respectively, and hydrogen (H2) was used as carrier gas. TMGa and NH3 fluxes were kept constant, with flow rates of 3.36 μmole/min and 0.05 standard liter/min, respectively. The fluence of hydrogen was also kept constant with the flux rate of 4.5 standard liter/min. GaN was deposited at 550 °C and 100 mbar. According to the X-ray diffraction spectra, a buffer layer was formed with a wurtzite structure, which is the stable phase. The thermodynamic affinities were estimated as A1 = 175.9 kJ/mole and A2 = 62.88 kJ/mole.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 84, Issue 10, 19 May 2010, Pages 1187–1190
نویسندگان
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