Electronegativity and point defect formation in the ion implanted SiO2 layers

The metal–oxide–silicon (MOS) diode structure containing ion implanted electropositive (M+) and electronegative (M−) ions is one of the most promising candidates for a new type of high-efficiency electroluminescence (EL) devices which can be integrated with standard silicon CMOS technology. The implantation process creates defects in the SiO2 layer. After implantation, an annealing process leads to the diffusion of implanted elements and broadening of the SiO2/Si interface. The influence of different implanted ions (Gd, F, K) was investigated by EL measurements and correlated to different defects in the oxide layer. Implanted electronegative ions (such as F) lead to defects comprising O2 molecules and peroxy radicals (POR). On the other hand, electropositive ions (Gd and K) increase the number of oxygen vacancy defects.