کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689588 | 1011234 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field emission studies of Te nanorods grown on Si (111) substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Tellurium nanorods were grown on silicon (111) substrates by thermal evaporation. The synthesized Te nanorods were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM), prior to the field emission investigations. The TEM image revealed that the nanorods are needle-like having diameter less than 20 nm and length in the range of 200-400 nm. The selected area electron diffraction (SAED) pattern and high resolution TEM micrographs clearly reveal the crystalline nature of the Te nanorods. The field emission studies were carried out in a planar diode (close proximity) configuration at background pressure of â¼1 Ã 10â9 mbar. An emission current density of â¼8.5 μA/cm2 has been drawn at an applied field of â¼3.2 V/μm. The Folwer-Nodhiem plot, showed a non-linear behaviour. The high value of field enhancement factor (β â¼Â 1 Ã 104), estimated from the slope of the F-N plot, suggests that the emission is indeed from the nanometric tips of the Te nanorods. The emission current stability studied at the preset value â¼3.5 μA over duration of more than 3 h is found to be very good, suggesting the use of Te nanorods as promising electron source for field emission based micro/nano-electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 83, Issue 11, 14 July 2009, Pages 1307-1310
Journal: Vacuum - Volume 83, Issue 11, 14 July 2009, Pages 1307-1310
نویسندگان
Padmakar G. Chavan, Sandip S. Patil, Mahendra A. More, Shashwati Sen, Madhvi Sharma, K.P. Muthe, Umananda M. Bhatta, P.V. Satyam, Dilip S. Joag,